Samsung Electronics Stars Mass Production of 128GB 'Through Silicon Via' DDR4 Memory Modules; Aims To Build High-Efficiency Enterprise Serves For Clients

Samsung Electronics announced Thursday it has begun mass-producing 128-gigabyte DRAM modules-the first in the world.

The memory module, known as the industry's first "Through Silicon Via" (TSV) DDR4 memory aims to help clients build enterprise servers with high-efficiency, thus enabling them to manage their data centers more easily, Korea Times reported Thursday.

Executive vice president of Samsung's memory business division Choi Joo Sun said,  "We are pleased that volume production of our high speed, low-power 128GB TSV DRAM module will enable our global IT customers and partners to launch a new generation of enterprise solutions with dramatically improved efficiency and scalability for their investment."

Unlike wore-bond or flip chip stacking mechanisms, the TSV technology utilizes vertical interconnects that passes through a silicon wafer, ensuring the highest energy-efficiency and speed of any DRAM module ever.

According to The Inquirer, Samsung's 128 GB TSV registered dual inline memory module (RDIMM) 144 DDR4 chips, arranged into 36 4GB DRAM packages. Each package contains four 20nm-based 8 GB chips assembled with using the TSV packaging technology.

The 128 GB TSV DDR4 is special designed with a master chip for 4GB package which embeds the data buffer function in order to optimize module performance and power consumption.

"Mass-production will enable global IT giants to launch their next-generation server systems in a timely manner," said Choi.

He added, "Samsung Electronics will continue to expand our customer base by forming more technology partnership with global IT market leaders."

Samsung's goal is to become the leader in the premium memory market globally by developing the use of the TSV technology. To boost its dominance in the DRAM market, Samsung plans to mass produce the 128gb DDR4 load reduced dual in-line memory module (LRDIMM) by the end of 2015.

Samsung's currently owns a 45.2 percent share in the global DRAM market for the second quarter of 2015. In second place is SK Hynix with 27.3 percent shares and Micron Technology in third place with 20.4 percent.